| PART |
Description |
Maker |
| SK83C SK85C SK86C |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBRS15H45CT |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| BZT52C6V2K BZT52C51K BZT52C9V1K BZT52C75K BZT52C7V |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| BZD17C12P BZD17C100P BZD17C13P BZD17C18P BZD17C68P |
Discrete Devices -Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| LLZ10 LLZ12 LLZ13 LLZ15 LLZ9V1 |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| BZV55B5V6 BZV55B56 BZV55B51 BZV55B5V1 BZV55B68 BZV |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| TS4148CRZG |
Discrete Devices-Diode-Switching Diode & Array
|
Taiwan Semiconductor
|
| ES1HL |
Discrete Devices -Diode-Super Fast Rectifier
|
Taiwan Semiconductor
|
| ESH2BA |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| 18TQ045 18TQ045S 18TQ035S 18TQ 18TQ035 18TQ040 18T |
45V 18A Schottky Discrete Diode in a TO-220AC package
45V 18A Schottky Discrete Diode in a D2-Pak package
40V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a TO-220AC package
SCHOTTKY RECTIFIER
CAT6 SOL PC PVC YEL 2OFT PVC SOLID PATCH CORD
CAT6 SOL PC PVC YEL 30FT PVC SOLID PATCH CORD
DIODE 18 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
40V 18A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
Vishay Semiconductors
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
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